Semiconductor fuses in a semiconductor device comprising metal gates

ABSTRACT

In a replacement gate approach, the semiconductor material of the gate electrode structures may be efficiently removed during a wet chemical etch process, while this material may be substantially preserved in electronic fuses. Consequently, well-established semiconductor-based electronic fuses may be used instead of requiring sophisticated metal-based fuse structures. The etch selectivity of the semiconductor material may be modified on the basis of ion implantation or electron bombardment.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present disclosure generally relates to the field of fabricatingintegrated circuits, and, more particularly, to electronic fuses incomplex integrated circuits that comprise metal gate electrodestructures.

2. Description of the Related Art

In modern integrated circuits, a very high number of individual circuitelements, such as field effect transistors in the form of CMOS, NMOS,PMOS elements, resistors, capacitors and the like, are formed on asingle chip area. Typically, feature sizes of these circuit elements aresteadily decreasing with the introduction of every new circuitgeneration, to provide currently available integrated circuits with ahigh performance in terms of speed and/or power consumption. A reductionin size of transistors is an important aspect in steadily improvingdevice performance of complex integrated circuits, such as CPUs. Thereduction in size commonly brings about an increased switching speed,thereby enhancing signal processing performance.

In addition to the large number of transistor elements, a plurality ofpassive circuit elements, such as capacitors and resistors, aretypically formed in integrated circuits as required by the basic circuitlayout. Due to the decreased dimensions of circuit elements, not onlythe performance of the individual transistor elements may be improved,but also their packing density may be significantly increased, therebyproviding the potential for incorporating increased functionality into agiven chip area. For this reason, highly complex circuits have beendeveloped, which may include different types of circuits, such as analogcircuits, digital circuits and the like, thereby providing entiresystems on a single chip (SOC).

Although transistor elements are the dominant circuit element in highlycomplex integrated circuits and substantially determine the overallperformance of these devices, other components, such as capacitors,resistors and electronic fuses, may be required, wherein the size ofthese passive circuit elements may also have to be adjusted with respectto the scaling of the transistor elements in order to not unduly consumevaluable chip area. Moreover, the passive circuit elements, such as theresistors, may have to be provided with a high degree of accuracy inorder to meet tightly set margins according to the basic circuit design.For example, even in substantially digital circuit designs,corresponding resistance values may have to be provided within tightlyset tolerance ranges so as to not unduly contribute to operationalinstabilities and/or enhanced signal propagation delay.

Similarly, electronic fuses may be used in complex integrated circuitsas additional mechanisms so as to allow the circuit itself to adaptperformance of certain circuit portions to comply with performance ofother circuit portions, for instance after completing the manufacturingprocess and/or during use of the semiconductor device, for instance whencertain critical circuit portions may no longer comply withcorresponding performance criteria, thereby requiring an adaptation ofcertain circuit portions, such as re-adjusting an internal voltagesupply, thereby resetting overall circuit speed and the like.

For this purpose, the so-called electronic fuses or e-fuses may beprovided in the semiconductor devices, which may represent electronicswitches that may be activated once in order to provide a desiredcircuit adaptation. Hence, the electronic fuses may be considered ashaving a high impedance state, which may typically also represent a“programmed” state, and may have a low impedance state, typicallyrepresenting a non-programmed state of the electronic fuse. Since theseelectronic fuses may have a significant influence on the overallbehavior of the entire integrated circuit, a reliable detection of thenon-programmed and the programmed state may have to be guaranteed, whichmay have to be accomplished on the basis of appropriately designed logiccircuitry. Furthermore, since typically these electronic fuses may beactuated once over the lifetime of the semiconductor device underconsideration, a corresponding programming activity may have to ensurethat a desired programmed state of the electronic fuse is reliablygenerated in order to provide well-defined conditions for the furtheroperational lifetime of the device. The programming of a fuse typicallyinvolves the application of a voltage pulse, which in turn induces acurrent pulse of sufficient current density in order to cause apermanent modification of a specific portion of the fuse. Thus, theelectronic behavior of the fuse and the corresponding conductors forsupplying the current and voltage to the fuse has to be preciselydefined to obtain a reliable programmed state of the fuse. For thispurpose, polysilicon is usually used for the fuse bodies, for instancein combination with a metal silicide, in which electromigration effects,in combination with other effects caused by the current pulse, may thenresult in a permanent generation of a high-ohmic state of the fuse body.

The continuous drive to shrink the feature sizes of complex integratedcircuits has resulted in a gate length of field effect transistors ofapproximately 50 nm and less. A field effect transistor, irrespective ofwhether an N-channel transistor or a P-channel transistor is considered,typically comprises so-called PN junctions that are formed by aninterface of highly doped regions, referred to as drain and sourceregions, with a slightly doped or non-doped region, referred to as achannel region, that is disposed adjacent to the highly doped regions.In a field effect transistor, the conductivity of the channel region,i.e., the drive current capability of the conductive channel, iscontrolled by a gate electrode formed adjacent to the channel region andseparated therefrom by a thin insulating layer. The conductivity of thechannel region, upon forming a conductive channel due to the applicationof an appropriate control voltage to the gate electrode, depends on thedopant concentration of the drain and source regions, the mobility ofthe charge carriers and, for a given transistor width, on the distancebetween the source region and the drain region, which is also referredto as channel length.

Presently, most complex integrated circuits are based on silicon due tothe substantially unlimited availability, the well understoodcharacteristics of silicon and related materials and processes, and dueto the experience gathered during the last 50 years. Therefore, siliconwill likely remain the material of choice for future circuitgenerations. One reason for the important role of silicon for thefabrication of semiconductor devices has been the superiorcharacteristics of a silicon/silicon dioxide interface that allows areliable electrical insulation of different regions from each other. Thesilicon/silicon dioxide interface is stable at high temperatures and,thus, allows high temperature processes to be performed, as aretypically required for anneal processes in order to activate dopants andto cure crystal damage without sacrificing the electricalcharacteristics of the interface. Consequently, in field effecttransistors, silicon dioxide has preferably been used as a gateinsulation layer which separates the gate electrode, frequentlycomprised of polysilicon, from the silicon channel region. Upon furtherdevice scaling, however, the reduction of channel length may require acorresponding adaptation of the thickness of the silicon dioxide gatedielectric in order to substantially avoid a so-called “short channel”behavior, according to which a variability in channel length may have asignificant influence on the resulting threshold voltage of thetransistor. Aggressively scaled transistor devices with a relatively lowsupply voltage and, thus, a reduced threshold voltage, therefore, sufferfrom a significant increase of the leakage current caused by the reducedthickness of a silicon dioxide gate dielectric. For example, a channellength of approximately 0.08 μm may require a gate dielectric made ofsilicon dioxide as thin as approximately 1.2 nm in order to maintain therequired capacitive coupling between the gate electrode and the channelregion. Although high speed transistor elements having an extremelyshort channel may, in general, preferably be used in high speed signalpaths, whereas transistor elements with a longer channel may be used forless critical signal paths, the relatively high leakage current causedby the direct tunneling of charge carriers through the ultra-thinsilicon dioxide gate dielectric of the high speed transistor elements,may reach values for an oxide thickness in the range of 1-2 nm that mayno longer be compatible with thermal design power requirements for anytype of complex integrated circuit system.

For this reason, replacing silicon dioxide as the material for gateinsulation layers has been considered, particularly for highlysophisticated applications. Possible alternative materials include suchmaterials that exhibit a significantly higher permittivity, so that aphysically greater thickness of a correspondingly formed gate insulationlayer provides a capacitive coupling that would be obtained by anextremely thin silicon dioxide layer. It has been suggested to replacesilicon dioxide with high permittivity materials, such as tantalumoxide, strontium titanium oxide, hafnium oxide, hafnium silicon oxide,zirconium oxide and the like.

Additionally, transistor performance may further be increased byproviding an appropriate conductive material for the gate electrode inorder to replace the usually used polysilicon material, sincepolysilicon may suffer from charge carrier depletion at the vicinity ofthe interface positioned between the gate dielectric material and thepolysilicon material, thereby reducing the effective capacitance betweenthe channel region and the gate electrode during transistor operation.Thus, a gate stack has been suggested in which a high-k dielectricmaterial provides enhanced capacitance, while additionally maintainingany leakage currents at an acceptable level. Since the non-polysiliconmaterial, such as titanium nitride and the like, may be formed such thatit may be directly in contact with the gate dielectric material, thepresence of a depletion zone may, thus, be avoided, while, at the sametime, a moderately high conductivity may be achieved.

As is well known, the threshold voltage of the transistor may depend onthe overall transistor configuration, on a complex lateral and verticaldopant profile of the drain and source regions, and the correspondingconfiguration of the PN junctions, and on the work function of the gateelectrode material. Consequently, in addition to providing the desireddopant profiles, the work function of the metal-containing gateelectrode material also has to be appropriately adjusted with respect tothe conductivity type of the transistor under consideration. For thisreason, typically, metal-containing electrode materials may be used forN-channel transistors and P-channel transistors, which may be providedaccording to well-established manufacturing strategies in a veryadvanced manufacturing stage. That is, in these approaches, the high-kdielectric material may be formed in combination with an appropriatemetal-containing cap layer, such as titanium nitride and the like,followed by the deposition of a polysilicon material in combination withother materials, if required, which may then be patterned in order toform a gate electrode structure. Concurrently, corresponding resistorsmay be patterned, as described above. Thereafter, the basic transistorconfiguration may be completed by forming drain and source regions,performing anneal processes, and finally embedding the transistors in adielectric material. Thereafter, an appropriate etch sequence may beperformed, in which the top surfaces of the gate electrode structures,and all resistive structures, such as fuses, may be exposed and thepolysilicon material may be removed. Subsequently, based on a respectivemasking regime, appropriate metal-containing electrode materials may befilled into gate electrode structures of N-channel transistors andP-channel transistors, respectively, in order to obtain a superior gatestructure, including a high-k gate insulating material in combinationwith a metal-containing electrode material, which may provide anappropriate work function for N-channel transistors, and P-channeltransistors, respectively. Concurrently, the resistive structures, suchas the fuses, may also receive the metal-containing electrode material.Due to the enhanced conductivity of the metal-containing electrodematerial, however, the electronic characteristics, such as resistivity,electromigration behavior and the like, of the fuses may also exhibit asignificantly reduced value, thereby requiring a reduction of linewidths of these structures and/or an increase of the total length ofthese structures. While the former measure may result in patterningproblems, since extremely small line widths may be required, the latteraspect may result in an increased consumption of valuable chip area.

Moreover, the redesign of the fuses in the form of metal fuses may, inaddition to the above-indicated design measures, also require additionalmaterials, since, typically, the programming of the fuses is associatedwith moderately high temperatures in a locally restricted manner causedby the high current pulse. For a fuse connecting to a copper-basedmetallization, the increased local heat generation may requireadditional measures in order to counter the increased diffusion activityof the copper species. For this reason, conventionally, an additionalbarrier layer is formed between the fuse body located in the devicelevel and the copper-based metallization so that the well-establishedinterlayer dielectric material system, in which the contacts are formedfor connecting to the transistors and fuses, has to be modified in orderto provide the required superior copper blocking capability, therebycontributing to further complexity, in addition to the required redesignof the fuses compared to well-established polysilicon-based fuses.

The present disclosure is directed to various methods and devices thatmay avoid, or at least reduce, the effects of one or more of theproblems identified above.

SUMMARY OF THE INVENTION

The following presents a simplified summary of the invention in order toprovide a basic understanding of some aspects of the invention. Thissummary is not an exhaustive overview of the invention. It is notintended to identify key or critical elements of the invention or todelineate the scope of the invention. Its sole purpose is to presentsome concepts in a simplified form as a prelude to the more detaileddescription that is discussed later.

The present disclosure generally relates to semiconductor devices andmanufacturing techniques in which electronic fuses may be formed on thebasis of appropriate semiconductor materials, such as a siliconmaterial, a silicon/germanium material and the like, while complex metalgate electrode structures may be provided for at least some transistorelements. For this purpose, the gate electrode structures may beprovided on the basis of a desired semiconductor material that isappropriate for the electronic fuses, wherein the semiconductor materialmay be replaced by one or more metal-containing electrode materials in avery advanced manufacturing stage in accordance with appropriatereplacement gate approaches. On the other hand, the semiconductormaterial may be substantially preserved in the electronic fuses, whichmay be accomplished by selectively modifying the etch characteristics ofthe semiconductor material, at least at a surface area thereof, in theelectronic fuses prior to performing a wet chemical etch process forremoving the semiconductor material selectively in the gate electrodestructures. The increase of the etch resistivity may be accomplished byan ion bombardment using an electrically inert species, such as xenon,which is to be understood as an atomic species that may notsubstantially alter the electronic characteristics of the basesemiconductor material, while concurrently causing a significantreduction of a removal rate during the selective wet chemical etchprocess. In other illustrative aspects disclosed herein, the etchbehavior of the semiconductor material may be efficiently modified by anelectron bombardment which may, in some illustrative embodiments, beapplied in a locally very selective manner, thereby avoiding thenecessity of providing a mask layer for confining the electron beam tothe device regions including the electronic fuses.

Consequently, replacement gate approaches may be efficiently applied inorder to obtain sophisticated high-k metal gate stacks, while at thesame time well-established semiconductor-based electronic fuses may beformed, thereby avoiding significant re-designs of electronic fusestructures and, in particular, avoiding the provision of additionalmaterial systems, such as additional diffusion barrier materials, whichmay frequently be used in metal fuses in combination with a coppermetallization in conventional strategies.

One illustrative semiconductor device disclosed herein comprises atransistor element comprising a gate electrode structure, which in turncomprises a high-k gate dielectric material and a metal-containingelectrode material formed above the high-k gate dielectric material.Moreover, the semiconductor device comprises an electronic fusecomprising a semiconductor material having an upper portion and a lowerportion, wherein the upper portion has an increased etch resistivitycompared to the lower portion.

One illustrative method disclosed herein relates to forming anelectronic fuse of a semiconductor device. The method comprises forminga layer stack above a first device region and a second device region ofthe semiconductor device, wherein the layer stack comprises a high-kdielectric material and a semiconductor material. The methodadditionally comprises forming a replacement gate electrode structureabove the first device region and a fuse body of an electronic fuse fromthe layer stack. Moreover, an etch resistivity of the semiconductormaterial is selectively increased in the fuse body. Furthermore, themethod comprises performing a wet chemical etch process to remove thesemiconductor material selectively in the replacement gate electrodestructure, while the semiconductor material having the increased etchresistivity is substantially preserved in the fuse body.

A further illustrative method disclosed herein comprises forming areplacement gate electrode structure above a first device region and anelectronic fuse above a second device region, wherein the replacementgate electrode structure and the electronic fuse comprise asemiconductor material. The method additionally comprises exposing asurface of the semiconductor material of the replacement gate electrodestructure and of the electronic fuse. Furthermore, the surface of thesemiconductor material is exposed to an electron bombardment selectivelyin the second device region. The method further comprises removing thesemiconductor material selectively from the replacement gate electrodestructure while substantially preserving the semiconductor material inthe electronic fuse. Additionally, the method comprises forming ametal-containing electrode material in the replacement gate electrodestructure.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be understood by reference to the followingdescription taken in conjunction with the accompanying drawings, inwhich like reference numerals identify like elements, and in which:

FIGS. 1 a-1 d schematically illustrate cross-sectional views of asemiconductor device during various manufacturing stages in forming ametal gate electrode structure and a semiconductor-based electronic fuseby increasing the etch resistivity of the semiconductor materialselectively in the electronic fuse in an advanced manufacturing stage onthe basis of an implantation process, according to illustrativeembodiments;

FIG. 1 e schematically illustrates a cross-sectional view of thesemiconductor device in which the etch resistivity of the semiconductormaterial is selectively increased in the electronic fuse on the basis ofan electron bombardment, according to further illustrative embodiments;

FIGS. 1 f-1 h schematically illustrate cross-sectional views of thesemiconductor device in further advanced manufacturing stages in which ametal-containing electrode material is selectively provided in the gateelectrode structure, according to illustrative embodiments;

FIGS. 1 i-1 j schematically illustrate cross-sectional views of thesemiconductor device according to illustrative embodiments in which theetch resistivity may be selectively adjusted in an early manufacturingstage; and

FIG. 1 k schematically illustrates a cross-sectional view of thesemiconductor device in a further advanced manufacturing stage in whicha transistor and an electronic fuse are connected to a metallizationsystem, according to illustrative embodiments.

While the subject matter disclosed herein is susceptible to variousmodifications and alternative forms, specific embodiments thereof havebeen shown by way of example in the drawings and are herein described indetail. It should be understood, however, that the description herein ofspecific embodiments is not intended to limit the invention to theparticular forms disclosed, but on the contrary, the intention is tocover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION

Various illustrative embodiments of the invention are described below.In the interest of clarity, not all features of an actual implementationare described in this specification. It will of course be appreciatedthat in the development of any such actual embodiment, numerousimplementation-specific decisions must be made to achieve thedevelopers' specific goals, such as compliance with system-related andbusiness-related constraints, which will vary from one implementation toanother. Moreover, it will be appreciated that such a development effortmight be complex and time-consuming, but would nevertheless be a routineundertaking for those of ordinary skill in the art having the benefit ofthis disclosure.

The present subject matter will now be described with reference to theattached figures. Various structures, systems and devices areschematically depicted in the drawings for purposes of explanation onlyand so as to not obscure the present disclosure with details that arewell known to those skilled in the art. Nevertheless, the attacheddrawings are included to describe and explain illustrative examples ofthe present disclosure. The words and phrases used herein should beunderstood and interpreted to have a meaning consistent with theunderstanding of those words and phrases by those skilled in therelevant art. No special definition of a term or phrase, i.e., adefinition that is different from the ordinary and customary meaning asunderstood by those skilled in the art, is intended to be implied byconsistent usage of the term or phrase herein. To the extent that a termor phrase is intended to have a special meaning, i.e., a meaning otherthan that understood by skilled artisans, such a special definition willbe expressly set forth in the specification in a definitional mannerthat directly and unequivocally provides the special definition for theterm or phrase.

According to the principles disclosed herein, semiconductor devices andmanufacturing techniques are provided in which electronic fuses may beformed on the basis of a semiconductor material, such as polysilicon andthe like, while complex metal-containing gate electrode structures oftransistors may be provided in accordance with sophisticated replacementgate approaches. The semiconductor material in the electronic fuse maybe substantially preserved by selectively increasing the etchresistivity of the semiconductor material, which may thus exhibit asignificantly reduced removal rate during a wet chemical etch processthat may be applied to efficiently remove the semiconductor materialfrom the replacement gate electrode structures. For example, a pluralityof selective wet chemical etch chemistries are available which exhibithigh sensitivity with respect to a modification of the molecularstructure and/or the presence of other atomic species so that a removalrate may be efficiently controlled on the basis of one or both of thesemechanisms. In some illustrative embodiments disclosed herein, TMAH(tetra methyl ammonium hydroxide) may be used as an efficient wetchemical etch chemistry which actually represents a chemical thatefficiently etches resist materials, which, however, may also be used inhigher concentrations at elevated temperatures in order to etch siliconmaterial with a high degree of selectivity with respect to silicondioxide, silicon nitride and the like. Additionally, the presence ofother atomic species, such as dopants and electrically inert atomicspecies, may have a significant influence on the actual etch rate, whilea significant dependence on a disturbance of the molecular structure mayresult in a reduced etch rate. For example, species such as xenon may beefficiently incorporated into an upper part of the semiconductormaterial with a concentration that may be readily obtained on the basisof implantation processes. In this manner, a significantly increasedetch resistivity may be imparted to the silicon-based semiconductormaterial on the basis of implantation techniques wherein appropriateprocess parameters may be readily selected so as to adapt dose andpenetration depth of the implantation species to the deviceconfiguration under consideration. That is, the implantation species maybe incorporated at any appropriate stage of the overall process flow,wherein the implantation energy may be efficiently adapted to thepresence of any further materials, such as dielectric cap materials andthe like, which may be provided above the semiconductor material whoseeffective etch resistivity is to be increased. Furthermore, an influenceof the implantation process may be selectively avoided by providing animplantation mask, such as a resist mask, so that a high degree offlexibility may be achieved with respect to generating the desiredselective etch behavior of a semiconductor material with differentcharacteristics in the replacement gate electrode structures and theelectronic fuses.

In other illustrative embodiments disclosed herein, a significantmodification of the etch behavior of the semiconductor material may beaccomplished by a selective electron bombardment, which may beaccomplished by any appropriate electron source, such as electronmicroscopes, as are typically available in semiconductor productionfacilities and the like. Furthermore, by using such electron beamsources, a spatially highly restricted electron beam may be created,which in turn may be directed to a desired device region of thesemiconductor device, without requiring the provision of an additionalmask, which may result in a very efficient procedure for programmingelectronic fuses, for instance for test purposes and the like. In otherillustrative embodiments, an electron bombardment may be obtained on thebasis of an electron “shower,” in combination with an appropriate mask,such as a resist mask.

Consequently, semiconductor-based electronic fuses may be provided,thereby avoiding additional complex process steps for re-designingelectronic fuses, for instance, when based on gate metal materials andthe like. Furthermore, the etch resistivity of the semiconductormaterial may be modified on the basis of well-established maskingregimes, for instance resist masks, so that the provision ofsophisticated hard mask materials may not be required in an advancedmanufacturing stage, which may otherwise be necessary for selectivelyprotecting the electronic fuses during the wet chemical etch process forremoving the semiconductor material from the replacement gate electrodestructures. Furthermore, by applying an implantation process, the etchresistivity may be modified at any appropriate stage of themanufacturing flow since implantation dose and energy may beappropriately adapted to the corresponding manufacturing stage of thereplacement gate electrode structure and the electronic fuses.

FIG. 1 a schematically illustrates a cross-sectional view of asemiconductor device 100 comprising a substrate 101 and a semiconductorlayer 102, which, in combination, may represent a silicon-on-insulator(SOI) configuration, a bulk configuration or a combination thereof. Forexample, in an SOI configuration, a buried insulating layer (not shown)may be formed below and adjacent to the semiconductor layer 102, while,in a bulk configuration, the semiconductor layer 102 may be formed on asubstantially crystalline material of the substrate 101. It should beappreciated that the “semiconductor layer” 102 may actually be comprisedof a plurality of semiconductor regions which may be laterally separatedby isolation structures comprised of any appropriate insulatingmaterial. For instance, the semiconductor layer 102 may represent asilicon-based material which may also comprise other components, such asgermanium, carbon and the like, in order to obtain the desiredelectronic characteristics. For example, a plurality of active regions102A, of which only one is illustrated in FIG. 1 a, may be comprised ofthe basic semiconductor material of the layer 102, wherein isolationstructures 102B, of which also only one is illustrated for convenience,may provide the lateral isolation of the active regions 102A. In theembodiment shown, at least a portion of the isolation structure 102B maybe considered as a device region receiving one or more electronic fusesin a later manufacturing stage. On the other hand, the active region102A may be referred to as a further device region since in and abovethe active region 102A a transistor is to be formed on the basis of ametal gate electrode structure. It should be appreciated that, in FIG. 1a, the regions 102A, 102B are illustrated as being positioned laterallyadjacent to each other, while, in other cases, the device region 102Bmay be positioned at any appropriate location on the substrate 101,depending on the circuit layout of the semiconductor device 100.Furthermore, in the manufacturing stage shown, a material layer stack110 may be formed above the active region 102A and the isolationstructure 102B and may comprise a gate dielectric material 111, possiblyin combination with a conductive cap material 112, such as titaniumnitride and the like. As previously explained, the gate dielectricmaterial 111 may comprise a high-k dielectric material having adielectric constant greater than 10.0, possibly in combination with a“conventional” gate dielectric material, such as a silicon oxide-basedmaterial and the like. The thickness of the layer 111 and the materialcomposition may be appropriately selected in order to obtain the desiredelectrical performance of a metal gate electrode structure to be formedabove the active region 102A.

In the embodiment shown, the material layer stack 110 may furthercomprise a semiconductor material 113, such as an amorphous orpolycrystalline silicon material, a silicon/germanium mixture and thelike. It should be appreciated that the semiconductor material 113 maybe provided with any desired dopant concentration as may be appropriatefor forming electronic fuses and/or other circuit elements, such asresistive structures, in a later manufacturing stage, since theelectronic characteristics of corresponding gate electrode structuresmay be adapted on the basis of materials that are to be provided in alater manufacturing stage. Similarly, a thickness of the layer 113 maybe selected in accordance with process requirements, for instance so asto obtain a desired gate height of a replacement gate electrodestructure, while also enabling an efficient patterning of the layerstack 110 based on given design rules for a gate length and for a widthof corresponding electronic fuses to be formed above the device region102B. Furthermore, other materials, such as a cap layer 114 and thelike, may be provided in the layer stack 110, depending on the furtherprocessing of the device 100. It should be appreciated that othermaterials, such as hard mask materials and the like, may also be appliedin order to appropriately pattern the stack 110 during the subsequentprocesses. For convenience, any such sacrificial materials are not shownin FIG. 1 a.

The semiconductor device 100 as illustrated in FIG. 1 a may be formed onthe basis of any appropriate process strategy. For instance, theisolation structure 102B may be formed in the semiconductor layer 102 onthe basis of any appropriate patterning strategy for forming trenchesand subsequently filling the trenches with any desired insulatingmaterial, such as silicon dioxide, silicon nitride and the like. Byforming isolation structures in the layer 102, the lateral position andsize of active regions, such as the region 102A, may be defined. Priorto or after forming the isolation structure 102B, the basic dopantconcentration may be generated in the active region 102A based on ionimplantation and the like. Next, the layer stack 110 may be formed byusing appropriate deposition techniques, possibly in combination withoxidation processes, in combination with additional treatments,depending on the material composition of the stack 110. For example, abasic silicon oxide material may be formed by deposition or oxidation,followed by the deposition of a high-k dielectric material, therebyproviding the layer 111. As discussed above, if required, a conductivecap layer, such as the layer 112, may be formed, followed by thedeposition of the semiconductor material 113, which may be accomplishedby low pressure chemical vapor deposition (CVD) techniques and the like.Thereafter, any further materials, such as the cap layer 114, forinstance in the form of a silicon nitride material, and any othermaterials may be deposited.

FIG. 1 b schematically illustrates the semiconductor device 100 in afurther advanced manufacturing stage in which a transistor 150 may beformed in and above the active region 102A. The transistor 150 maycomprise a replacement gate electrode structure 110A including thematerials 111, 112, 113 and 114. Furthermore, a sidewall spacerstructure 115 laterally delineates the gate electrode structure 110A. Alength of the gate electrode structure 110A may be substantiallydetermined by the horizontal extension of the semiconductor material 113and may be in the range of approximately 50 nm and less in sophisticatedsemiconductor devices, as is also discussed above. Furthermore, thetransistor 150 may comprise drain and source regions 151 with a channelregion 153 positioned between the drain region and the source region151. Metal silicide regions 152 may be formed in a part of the drain andsource regions 151, as required.

Furthermore, an electronic fuse 110B may be formed above the isolationregion 102B and may comprise the materials 111, 112, 113 and 114 incombination with the sidewall spacer structure 115, wherein thecomponents described so far of the electronic fuse 110B may also bereferred to as a fuse body, since other components, such as metalconductors and the like, may have to be added in a later manufacturingstage so as to complete the electronic fuse 110B. It should beappreciated that the “width” of the electronic fuse 110B, i.e., in FIG.1 b, the horizontal extension, may differ from the length of the gateelectrode structure 110A depending on the required overall electriccharacteristics, such as resistance value, electromigration behavior of,for instance, a portion of the conductive components of the electronicfuse 110B and the like. On the other hand, the term “length” mayrepresent a current flow direction of the electronic fuse 110B and mayrepresent a direction perpendicular to the drawing plane of FIG. 1 b andalso a horizontal direction of FIG. 1 b when a non-linear configurationof the electronic fuse 110B is provided.

The semiconductor device 100 as illustrated in FIG. 1 b may be formed onthe basis of the following processes. The layer stack 110 (FIG. 1 a) maybe patterned on the basis of any appropriate lithography and etchtechniques, thereby obtaining the materials 111, 112, 113 and 114 of thestructures 110A, 110B with the desired lateral dimensions. Next, aportion of the sidewall spacer structure 115 may be provided, forinstance in the form of a silicon nitride spacer element, and a firstportion of the drain and source regions 151 may be formed by ionimplantation. Thereafter, the spacer structure 115 may be provided withone or more further spacer elements (not shown) and the drain and sourceregions 151 may receive the required complex lateral and vertical dopantprofile. It should be appreciated that additional process steps may beimplemented, for instance, when incorporating a strain-inducingsemiconductor material and the like, if required for enhancingperformance of the transistor 150. Next, high temperature processes maybe performed in order to activate dopants and re-crystallizeimplantation-induced damage. Next, the metal silicide regions 152 may beformed by depositing a refractory metal and initiating a chemicalreaction, wherein, if desired, the layer 114 may protect thesemiconductor material 113, while, in other cases, a metal silicide maybe formed in the semiconductor material 113, if considered appropriatefor the further processing of the device 100. After removing any excessmaterial, the basic configuration of the transistor 150 is obtained andthe further processing may be continued by depositing a portion of aninterlayer dielectric material.

FIG. 1 c schematically illustrates the semiconductor device 100 with aninterlayer dielectric material 120 that laterally surrounds the gateelectrode structure 110A and the electronic fuse 110B. For instance, theinterlayer dielectric material 120 may comprise a first dielectricmaterial 121, such as a silicon nitride material and the like, which mayalso have a high internal stress level if considered appropriate for thedevice 100. Furthermore, a second dielectric material 122, such as asilicon dioxide material and the like, may be provided. It should beappreciated, however, that the interlayer dielectric material 120 mayhave any other appropriate composition as required for obtaining thedesired electrical performance of the transistor 150 and/or theelectronic fuse 110B. Furthermore, in the manufacturing stage shown, thedielectric material 120 may comprise a planarized surface 120S at aheight level that is appropriate to also expose a surface 113S of thesemiconductor material 113 in the gate electrode structure 110A and inthe electronic fuse 110B.

The semiconductor device 100 as shown in FIG. 1 c may be formed bydepositing the interlayer dielectric material 120 using any appropriatedeposition technique, followed by a planarization process, for instance,a chemical mechanical polishing (CMP) process and the like.Consequently, upon planarizing the material 120, the surface areas 113Smay be exposed.

FIG. 1 d schematically illustrates the semiconductor device 100 during aprocess 104 in order to increase an etch selectivity of the material 113selectively in the electronic fuse 110B. In the embodiment shown, theprocess 104 may represent an ion implantation process for incorporatingan appropriate atomic species, such as an electrically inert species,into an upper portion 113U of the semiconductor material 113, therebyimparting an increased etch resistivity to the upper portion 113Ucompared to a lower portion 113L. In one illustrative embodiment, aspecies 104B comprising xenon may be incorporated during theimplantation process 104, which may thus substantially preserve thebasic electronic characteristics of the material 113, while at the samesignificantly reducing an etch rate during a subsequent etch process.For this purpose, an appropriate implantation mask 103, such as a resistmask, may be formed so as to selectively cover the transistor 150. Itshould be appreciated that appropriate process parameters for theimplantation process 104 may be readily established on the basis ofsimulations, experiments and the like, wherein a desired degree ofmodification of an etch rate may be determined by performingcorresponding experiments using materials 113 having incorporatedtherein different concentrations of the species 104B. For instance, aconcentration of approximately 10¹⁹-10²⁰ per cm³ may change the etchcharacteristics of a silicon-based material so as to provide anefficient etch stop material with respect to a wet chemical etch recipe,for instance based on TMAH.

FIG. 1 e schematically illustrates the semiconductor device 100according to illustrative embodiments in which the upper portion 113U ofthe electronic fuse 110B may be modified on the basis of an electronbombardment 104E. For this purpose, an appropriate electron source (notshown) may be used in order to obtain the desired energy density andpenetration depth required for significantly modifying the etch rate inthe upper portion 113U. For example, electron energies in the range of5-50 keV or even higher may be used, wherein an exposure time may dependon the available beam current that may be applied by the electron beamsource. For instance, electron microscopes may be efficiently used as anelectron beam source, since these tools are typically available insemiconductor production facilities, wherein the beam current and theelectron energy may be varied within a wide range. Similarly, as pointedout above with respect to the implantation process, also in this case,appropriate process parameters may be determined on the basis ofsimulations and/or experiments. In the embodiment shown in FIG. 1 e, theelectron beam 104E may be provided in a spatially restricted manner sothat other device regions, such as the transistor 150, may not beaffected by the beam 104E. In this manner, specific areas and thuselectronic fuses may be selected so as to obtain a desired configurationon the basis of the semiconductor material 113 without requiringsophisticated lithography processes. Hence, the electron beam 104E maybe positioned above the substrate 101 at any desired position in orderto prepare corresponding structures, such as the electronic fuse 110B,for the subsequent wet chemical etch process in which the semiconductormaterial 113 is to be removed from the transistor 150.

In other illustrative embodiments, a mask, such as the mask as shown inFIG. 1 d, may be provided so as to expose the electronic fuse 110B tothe electron beam 104E and this beam may not be provided with a highspatial resolution. For example, a moderately laterally large electronbeam may be scanned across the substrate 101 or an electron shower maybe produced so as to be applied to large portions or the entiresubstrate 101. Consequently, the electron bombardment 104E may beapplied when the surface areas 113S are substantially exposed, therebymodifying the etch resistivity of the upper portion 113U with highefficiency.

FIG. 1 f schematically illustrates the semiconductor device 100 in afurther advanced manufacturing stage when exposed to a wet chemical etchambient 105, for instance established on the basis of TMAH, in order toefficiently remove the material 113 from the gate electrode structure110A. On the other hand, the material 113 in the electronic fuse 110B issubstantially preserved due to the presence of the modified upperportion 113U having the increased etch resistivity. As previouslyexplained, TMAH may also exhibit a high degree of selectivity withrespect to dielectric materials, such as silicon dioxide, siliconnitride and the like, so that the interlayer dielectric material 120 andthe spacer structure 115 may act as sufficient etch stop materials. Dueto the upper portion 113U, the material 113 may be substantiallypreserved in the electronic fuse 110B, which may be understood such thatless than approximately 10 percent of the initial material 113 of theelectronic fuse 110B may be removed during the etch process 105. Inother cases, less than approximately 5% of the initial amount of thematerial 113 may be removed during the process 105 due to the modifiedupper portion 113U.

FIG. 1 g schematically illustrates the semiconductor device 100 with anopening 116 formed in the gate electrode structure 110A due to theremoval of the material 113. It should be appreciated that the layer 112may act as an efficient protection layer upon forming the opening 116during the etch process 105 of FIG. 1 e. In other cases, if required,the layer 112 may be removed upon forming the opening 116 and may bereplaced by any other appropriate material, such as a high-k dielectricmaterial and the like, if such a material is not yet incorporated in thelayer 111.

Subsequently, any further material or materials may be filled into theopening 116, such as a work function adjusting species, possibly incombination with other conductive materials, such as titanium nitride,tantalum nitride and the like. It should be appreciated that, typically,P-channel transistors and N-channel transistors may require differenttypes of conductive materials to be filled in the openings 116 in orderto obtain an appropriate work function for these different transistorelements. Consequently, depending on the process strategy, materials maybe deposited and may be selectively removed, followed by the depositionof a further material, depending on the overall process strategy forproviding the different work function materials. Thereafter, a desiredelectrode material may be deposited.

FIG. 1 h schematically illustrates the semiconductor device 100 in afurther advanced manufacturing stage in which one or more materiallayers 117 may be formed in the gate electrode structure 110A, which maycomprise a work function adjusting species, such as lanthanum, aluminumand the like, possibly in combination with additional conductive barrieror etch stop materials, followed by an electrode material 118, such asaluminum and the like. On the other hand, the electronic fuse 110B maycomprise the semiconductor material 113 which may thus determine theoverall electrical behavior of the structure 110B in combination withthe geometric configuration. As previously indicated, a plurality ofwell-established designs of electronic fuses may be available forpolysilicon-based semiconductor devices and any such designs maybasically be used when compatible with the overall configuration of thesemiconductor device 100. Consequently, the electronic fuse 110B may beprovided on the basis of well-established design criteria ofsemiconductor-based fuse structures without requiring significantmodifications, while also avoiding complex dielectric diffusionbarriers, as may typically be required in conventional strategies whenusing metal-based fuses in combination with a copper metallization.

It should be appreciated that the etch resistivity of the material 113of the electronic fuse 110B may be modified at any appropriatemanufacturing stage when an implantation process may be used toincorporate a desired concentration in the upper portion 113U. For thispurpose, the implantation parameters, such as implantation energy, maybe readily adapted so as to take into consideration the presence of anyfurther materials provided above the semiconductor material 113.

FIG. 1 i schematically illustrates the semiconductor device 100according to illustrative embodiments in which the etch resistivity ofthe material 113 may be selectively increased in an early manufacturingstage, i.e., prior to actually patterning the gate electrode structure110A and the electronic fuse 110B (FIG. 1 b). As illustrated, animplantation mask 103B, such as a resist mask, is formed so as to exposea portion of the layer stack 110 above the isolation structure 102B. Dueto the presence of additional materials of the layer stack 110, such asthe cap layer 114, process parameters, i.e., the implantation energy ofthe process 104A, may be appropriately adjusted in order to incorporatethe species 104B in the semiconductor layer 113. Appropriate processparameters may be readily determined by simulation, experiments and thelike. After the implantation process 104A, the mask 103B may beefficiently removed, while the cap layer 114 may preserve integrity ofthe material 113. The further processing may then be continued, as isdescribed above with reference to FIGS. 1 a and 1 b in order to patternthe gate electrode structure 110A and the electronic fuse 110B, whichmay have incorporated therein the implantation species 104B, therebyimparting the increased etch resistivity to the material 113 selectivelyin the electronic fuse 110B (FIG. 1 h).

FIG. 1 j schematically illustrates the semiconductor device 100according to a further illustrative embodiment in which an implantationprocess 104C may be performed in a manufacturing stage after forming thegate electrode structure 110A and the electronic fuse 110B and prior todepositing an interlayer dielectric material. As illustrated, animplantation mask 103C may cover the electrode structure 110A and theactive region 102A and may expose the electronic fuse 110B and theisolation region 102B. The implantation species 104B may thus beselectively incorporated into the semiconductor material 113 of theelectronic fuse 110B, wherein process parameters may be adapted so as totake into consideration the presence of the cap layer 114. Afterremoving the implantation mask 103C, the further processing may becontinued, for instance, by forming metal silicide regions anddepositing an interlayer dielectric material.

Consequently, a high degree of flexibility in scheduling the overallmanufacturing process may be obtained on the basis of an ionimplantation process for modifying the etch resistivity of thesemiconductor material 113 selectively in the electronic fuse 110B.

FIG. 1 k schematically illustrates the semiconductor device 100 in afurther advanced manufacturing stage. As illustrated, a contact level130 may be formed above the transistor 150 and the electronic fuse 110Band may comprise any appropriate dielectric material 131, such as asilicon dioxide material and the like, in which contact elements 132A,132C, 132B are provided in order to establish an electrical connectionto the transistor 150 and to the electronic fuse 110B. The contactelements 132A, 132B, 132C may be formed on the basis of well-establishedprocess strategies and may comprise any appropriate conductive material,such as tungsten, copper, aluminum and the like, possibly in combinationwith appropriate conductive barrier materials (not shown). Furthermore,a metallization layer 140 may be formed above the contact level 130 andmay comprise an appropriate dielectric material 141 and metal regions142A, 142B in order to appropriately connect the transistor 150 to othercircuit elements (not shown) and also to connect the electronic fuse110B to a control circuit (not shown) in order to provide appropriatevoltage and current pulses and also to determine the state of theelectronic fuse 110B, as is also previously discussed. The metallizationlayer 140 may comprise the dielectric material 141, for instance in theform of a low-k dielectric material in combination with highlyconductive metals such as copper and the like which may require anotherconfinement material, for instance based on conductive and/or dielectricdiffusion barrier layers.

The contact level 130 and the metallization layer 140 may be formed onthe basis of any appropriate process strategy wherein, due towell-established configuration of the electronic fuse 110B comprisingthe semiconductor material 113, an extremely high current density andthus very high temperatures locally in the vicinity of the electronicfuse 110B may be suppressed, thereby not requiring a superior diffusionblocking effect between the devices 150 and 110B and copper-containingmetallization structures.

As a result, the present disclosure provides semiconductor devices andmanufacturing techniques in which electronic fuses and also othersemiconductor-based circuit elements may be formed on the basis of asemiconductor electrode material, while complex gate electrodestructures may be provided on the basis of a replacement gate approachso as to obtain a metal-containing electrode material in an advancedmanufacturing stage. For this purpose, the etch resistivity of an upperportion of the semiconductor material may be selectively increased inthe electronic fuses or other semiconductor-based circuit elements byincorporating an atomic species such as xenon by ion implantation or bymodifying the surface characteristics on the basis of an electronbombardment at an appropriate manufacturing stage. For example, theelectron bombardment may be applied at any manufacturing stage in whichthe surface of the semiconductor material may be exposed, while on theother hand an implantation process may be performed at any appropriatemanufacturing stage, wherein the presence of any further materialsformed above the semiconductor material may be taken into considerationby appropriately adapting the implantation parameters. Consequently, theetch resistivity of the semiconductor material may be appropriatelyspatially patterned without requiring the provision of any hard maskmaterials, which may otherwise result in a very complex removal process.In some illustrative embodiments, spatial patterning of the etchresistivity may be accomplished without providing any mask material,such as a resist material, by using a spatially restricted electronbeam.

The particular embodiments disclosed above are illustrative only, as theinvention may be modified and practiced in different but equivalentmanners apparent to those skilled in the art having the benefit of theteachings herein. For example, the process steps set forth above may beperformed in a different order. Furthermore, no limitations are intendedto the details of construction or design herein shown, other than asdescribed in the claims below. It is therefore evident that theparticular embodiments disclosed above may be altered or modified andall such variations are considered within the scope and spirit of theinvention. Accordingly, the protection sought herein is as set forth inthe claims below.

1. A semiconductor device, comprising: a transistor element comprising agate electrode structure, said gate electrode structure comprising ahigh-k gate dielectric material and a metal-containing electrodematerial formed above said high-k gate dielectric material; and anelectronic fuse comprising a semiconductor material having an upperportion and a lower portion, said upper portion having an increased etchresistivity compared to said lower portion.
 2. The semiconductor deviceof claim 1, wherein said upper portion comprises an electrically inertspecies.
 3. The semiconductor device of claim 1, wherein said electronicfuse further comprises a layer of a metal-containing material formed ona layer of said high-k gate dielectric material.
 4. The semiconductordevice of claim 1, wherein said semiconductor material comprisessilicon.
 5. The semiconductor device of claim 1, wherein saidsemiconductor material comprises germanium.
 6. The semiconductor deviceof claim 1, wherein said gate electrode structure has a gate length ofapproximately 50 nm or less.
 7. A method of forming an electronic fuseof a semiconductor device, the method comprising: forming a layer stackabove a first device region and a second device region of saidsemiconductor device, said layer stack comprising a high-k dielectricmaterial and a semiconductor material; forming a replacement gateelectrode structure above said first device region and a fuse body abovesaid second device region from said layer stack; increasing an etchresistivity of said semiconductor material selectively in said fusebody; and performing a wet chemical etch process to remove saidsemiconductor material selectively in said replacement gate electrodestructure, while substantially maintaining said semiconductor materialhaving the increased etch resistivity in said fuse body.
 8. The methodof claim 7, wherein increasing an etch resistivity comprises performingan ion implantation process so as to incorporate an electrically inertspecies into said semiconductor material selectively above said seconddevice region.
 9. The method of claim 8, wherein said electrically inertspecies comprises xenon.
 10. The method of claim 7, wherein increasingan etch resistivity comprises performing an electron bombardmentselectively above said second device region.
 11. The method of claim 10,wherein performing an electron bombardment comprises directing a locallyrestricted electron beam to said second device region without maskingsaid first device region.
 12. The method of claim 7, further comprisingforming a transistor on the basis of said replacement gate electrodestructure, forming a dielectric material above said transistor and saidfuse body and selectively replacing said semiconductor material afterforming said dielectric material.
 13. The method of claim 12, whereinsaid etch resistivity is increased after forming said dielectricmaterial.
 14. The method of claim 13, further comprising planarizingsaid dielectric material and exposing said semiconductor material ofsaid replacement gate electrode structure and of said fuse body andwherein said etch resistivity is increased after planarizing saiddielectric material.
 15. The method of claim 12, wherein said etchresistivity is increased prior to forming said dielectric material. 16.The method of claim 15, wherein said etch resistivity is increased priorto forming said replacement gate electrode structure.
 17. The method ofclaim 7, wherein forming said material layer stack comprises forming aconductive cap layer above said high-k dielectric material.
 18. Themethod of claim 17, wherein forming said fuse body comprises removing atleast said conductive cap layer from above said second device regionprior to forming said replacement gate electrode structure and said fusebody.
 19. A method, comprising: forming a replacement gate electrodestructure above a first device region and an electronic fuse above asecond device region, said replacement gate electrode structure and saidelectronic fuse comprising a semiconductor material; exposing a surfaceof said semiconductor material of said replacement gate electrodestructure and of said electronic fuse; exposing said surface of saidsemiconductor material to an electron bombardment selectively in saidsecond device region; removing said semiconductor material selectivelyfrom said replacement gate electrode structure while substantiallymaintaining said semiconductor material in said electronic fuse; andforming a metal-containing electrode material in said replacement gateelectrode structure.
 20. The method of claim 19, wherein exposing saidsurface of said semiconductor material to an electron bombardmentcomprises directing an electron beam selectively to said second deviceregion without masking said first device region.